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LHF00L28
DC Characteristics (Continued)
V CC =2.7V-3.6V
17
Symbol
V IL
V IH
Parameter
Input Low Voltage
Input High Voltage
Notes
5
4
Min.
-0.4
2.4
Typ.
Max.
0.4
V CC
+ 0.4
Unit
V
V
Test Conditions
V OL
V OH
Output Low Voltage
Output High Voltage
4,7
4
V CC
-0.2
0.2
V
V
V CC =V CC Min.,
I OL =100 μ A
V CC =V CC Min.,
I OH =-100μA
WP#/ACC during Block Erase, Full
V ACCH
Chip Erase, Program or OTP Program
5
11.7
12.0
12.3
V
Operations
V LKO
V CC Lockout Voltage
1.5
V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values are the reference values at V CC =3.0V and T A =+25 ° C
unless V CC is specified.
2. I CCWS and I CCES are specified with the device de-selected. If read or program is executed while in block erase suspend
mode, the device’s current draw is the sum of I CCES and I CCR or I CCW . If read is executed while in program suspend
mode, the device’s current draw is the sum of I CCWS and I CCR .
3. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
completion. Standard address access timings (t AVQV ) provide new data when addresses are changed.
4. Sampled, not 100% tested.
5. Applying 12.0V±0.3V to WP#/ACC provides fast erasing or fast programming mode. In this mode, WP#/ACC is power
supply pin and supplies the memory cell current for block erasing and programming. Use similar power supply trace
widths and layout considerations given to the V CC power bus.
Applying 12.0V±0.3V to WP#/ACC during erase/program can only be done for a maximum of 1,000 cycles on each
block. WP#/ACC may be connected to 12.0V±0.3V for a total of 80 hours maximum.
6. For all pins other than those shown in test conditions, input level is V CC or GND.
7. Includes RY/BY#.
Rev. 2.45
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